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IPB081N06L3GATMA1 Image

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Mfr. #:
IPB081N06L3GATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 N-channel
Drain Source Voltage (Vdss) 60V
Continuous Drain Current (Id) 50A
Power (Pd) 79W
On-resistance (RDS(on)@Vgs,Id) 8.1mΩ@50A,10V
Threshold Voltage (Vgs(th)@Id) 2.2V@34uA
Gate Charge (Qg@Vgs) 29nC@4.5V
Input Capacitance (Ciss@Vds) 4.9nF@30V
Operating Temperature -55℃~ 175℃@(Tj)
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