IPB200N25N3 G Infineon | Infineon agency

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Mfr. #：

IPB200N25N3 G

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Datasheet:

In Stock:

116

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Product Catalog	Field Effect Transistor (MOSFET)
Type	1 N-channel
Drain Source Voltage (Vdss)	250V
Continuous Drain Current (Id)	64A
Power (Pd)	300W
On-resistance (RDS(on)@Vgs,Id)	20mΩ@10V,64A
Threshold Voltage (Vgs(th)@Id)	4V@270uA

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