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IPB042N10N3 G E8187 Image

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Mfr. #:
IPB042N10N3 G E8187
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 N-channel
Drain-Source Voltage (Vdss) 100V
Continuous Drain Current (Id) 137A
Power (Pd) 214W
On-resistance (RDS(on)@Vgs,Id) 3.6mΩ@10V,100A
Threshold Voltage (Vgs(th)@Id) 2.7V@150mA
Gate Charge (Qg@Vgs) 88nC@0~10V
Input Capacitance (Ciss@Vds) 6.32nF@50V
Reverse Transfer Capacitance (Crss@Vds) 41pF@50V
Operating Temperature -55℃~ 175℃@(Tj)
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