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IPB160N04S4H1ATMA1 Image

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Mfr. #:
IPB160N04S4H1ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 N-channel
Drain Source Voltage (Vdss) 40V
Continuous Drain Current (Id) 160A
Power (Pd) 167W
On-resistance (RDS(on)@Vgs,Id) 1.6mΩ@100A,10V
Threshold Voltage (Vgs(th)@Id) 4V@110uA
Gate Charge (Qg@Vgs) 137nC@10V
Input Capacitance (Ciss@Vds) 10.92nF@25V
Operating Temperature -55℃~ 175℃@(Tj)
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