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IPB160N08S4-03ATMA1 Image

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Mfr. #:
IPB160N08S4-03ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 N-channel
Drain Source Voltage (Vdss) 80V
Continuous Drain Current (Id) 160A
Power (Pd) 208W
On-resistance (RDS(on)@Vgs,Id) 3.2mΩ@100A,10V
Threshold Voltage (Vgs(th)@Id) 4V@150uA
Gate Charge (Qg@Vgs) 112nC@10V
Input Capacitance (Ciss@Vds) 7.75nF@25V
Operating Temperature -55℃~ 175℃@(Tj)
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