LOGO
LOGO
ISZ0803NLSATMA1 Image

img for reference only

Mfr. #:
ISZ0803NLSATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 N-channel
Drain-Source Voltage (Vdss) 100V
Continuous Drain Current (Id) 7.7A; 37A
Power (Pd) 2.1W; 43W
On-resistance (RDS(on)@Vgs,Id) 16.9mΩ@20A,10V
Threshold Voltage (Vgs(th)@Id) 2.3V@18uA
Gate Charge (Qg@Vgs) 15nC@10V
Input Capacitance (Ciss@Vds) 1nF@50V
Operating Temperature -55℃~ 150℃@(Tj)
Related models
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd