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ISZ080N10NM6ATMA1 Image

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Mfr. #:
ISZ080N10NM6ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 N-channel
Drain-Source Voltage (Vdss) 100V
Continuous Drain Current (Id) 75A; 13A
Power (Pd) 100W; 3W
On-resistance (RDS(on)@Vgs,Id) 8.04mΩ@20A,10V
Threshold Voltage (Vgs(th)@Id) 3.3V@36uA
Gate Charge (Qg@Vgs) 24nC@10V
Input Capacitance (Ciss@Vds) 1.8nF@50V
Operating Temperature -55℃~ 175℃@(Tj)
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