LOGO
LOGO
IPD50N03S207ATMA1 Image

img for reference only

Mfr. #:
IPD50N03S207ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 30 V 50A (Tc) 136W (Tc) PG-TO252-3-11
Datasheet:
In Stock:
2496
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 50 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 7.3 mOhm @ 50 A, 10 V
Vgs(th) (max) at Id 4 V @ 85 μA
Gate Charge?(Qg) (max) at Vgs 68 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (max) 2000 pF @ 25 V
FET Function -
Power Dissipation (max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package/Case TO-252-3, DPak (2-Lead Tab), SC-63
Related models
  • IRFR4104TRL

    Surface Mount N Channel 40 V 42A (Tc) 140W (Tc) D-Pak

  • IRFR4104TRR

    Surface Mount N Channel 40 V 42A (Tc) 140W (Tc) D-Pak

  • IRF1010EZ

    Through hole N channel 60 V 75A (Tc) 140W (Tc) TO-220AB

  • IRF1010Z

    Through hole N channel 55 V 75A (Tc) 140W (Tc) TO-220AB

  • 64-2042

    Through hole N channel 40 V 75A (Tc) 220W (Tc) TO-262

  • IRF4104

    Through hole N channel 40 V 75A (Tc) 140W (Tc) TO-220AB

  • IRF540Z

    Through hole N channel 100 V 36A (Tc) 92W (Tc) TO-220AB

  • IRLIB4343

    Through hole N channel 55 V 19A (Tc) 39W (Tc) TO-220AB whole package

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd