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IPAW60R280P7SE8228XKSA1 Image

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Mfr. #:
IPAW60R280P7SE8228XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 600 V 12A (Tc) 24W (Tc) PG-TO220-FP
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? P7
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 600 V
Current at 25°C - Continuous Drain (Id) 12A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 280 mOhm @ 3.8A, 10V
Vgs(th) (max) at Id 4V @ 190μA
Gate Charge?(Qg) (max) at Vgs 18 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 761 pF @ 400 V
FET Function -
Power Dissipation (Max) 24W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package/Case TO-220-3 Full Package
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