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IPL65R650C6SATMA1 Image

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Mfr. #:
IPL65R650C6SATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 650 V 6.7A (Tc) 56.8W (Tc) PG-TSON-8-2
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? C6
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 6.7A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 650 mOhm @ 2.1A, 10V
Vgs(th) (max) at Id 3.5V @ 210μA
Gate Charge?(Qg) (max) at Vgs 21 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 440 pF @ 100 V
FET function -
Power dissipation (max) 56.8W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-TSON-8-2
Package/case 8-PowerTDFN
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