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BSB104N08NP3GXUSA1 Image

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Mfr. #:
BSB104N08NP3GXUSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 80 V 13A (Ta), 50A (Tc) 2.8W (Ta), 42W (Tc) MG-WDSON-2, CanPAK M?
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 80 V
Current at 25°C - Continuous Drain (Id) 13A (Ta), 50A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 10.4 mOhm @ 10A, 10V
Vgs(th) (max) at Id 3.5V @ 40μA
Gate Charge?(Qg) (max) at Vgs 31 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 2100 pF @ 40 V
FET function -
Power dissipation (max) 2.8W (Ta), 42W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package MG-WDSON-2, CanPAK M?
Package/case 3-WDSON
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