LOGO
LOGO
IPD50N04S308ATMA1 Image

img for reference only

Mfr. #:
IPD50N04S308ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 40 V 50A (Tc) 68W (Tc) PG-TO252-3-11
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 40 V
Current at 25°C - Continuous Drain (Id) 50 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 7.5 mOhm @ 50 A, 10 V
Vgs(th) (max) at Id 4 V @ 40 μA
Gate Charge?(Qg) (max) at Vgs 35 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (max) 2350 pF @ 25 V
FET Function -
Power Dissipation (max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package/Case TO-252-3, DPak (2-Lead Tab), SC-63
Related models
  • CY15V104QI-20LPXI

    IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.71÷1.89VDC; 20MHz; GQFN8

  • CY15V104QN-20LPXI

    IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.71÷1.89VDC; 20MHz; GQFN8

  • CY15V104QN-50SXI

    IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.71÷1.89VDC; 50MHz; SOIC8

  • CY15V104QN-50SXIT

    IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.71÷1.89VDC; 50MHz; SOIC8

  • CY15V104QSN-108SXI

    IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.71÷1.89VDC; 108MHz; SOIC8

  • CY15B108QN-40LPXI

    IC: FRAM memory; 8MbFRAM; SPI; 1024kx8bit; 1.8÷3.6VDC; 40MHz; GQFN8

  • CY15B108QN-40SXI

    IC: FRAM memory; 8MbFRAM; SPI; 1024kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8

  • CY15B108QN-40SXIT

    IC: FRAM memory; 8MbFRAM; SPI; 1024kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd