LOGO
LOGO
IPB019N06L3GATMA1 Image

img for reference only

Mfr. #:
IPB019N06L3GATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
Datasheet:
In Stock:
6258
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology Si
Mounting Style SMD/SMT
Package/Case D2PAK-3 (TO-263-3)
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 60 V
Id-Continuous Drain Current 120 A
Rds On-Drain-Source On-Resistance 1.6 mOhms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage 1.2 V
Qg-Gate Charge 166 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 175 C
Pd-Power Dissipation 250 W
Channel Mode Enhancement
Qualification
Trade Name OptiMOS
Package Reel, Cut Tape, MouseReel
Related models
  • IRF7207

    Surface Mount Type P Channel 20 V 5.4A (Tc) 2.5W (Tc) 8-SO

  • IRF7233

    Surface Mount Type P Channel 12 V 9.5A (Ta) 2.5W (Ta) 8-SO

  • IRF5210L

    Through hole P channel 100 V 40A (Tc) 3.8W (Ta), 200W (Tc) TO-262

  • IRF5305L

    Through hole P channel 55 V 31A (Tc) 3.8W (Ta), 110W (Tc) TO-262

  • IRF6215L

    Through hole P channel 150 V 13A (Tc) 3.8W (Ta), 110W (Tc) TO-262

  • IRF9520NL

    Through hole P channel 100 V 6.8A (Tc) 3.8W (Ta), 48W (Tc) TO-262

  • IRF9530NL

    Through hole P channel 100 V 14A (Tc) 3.8W (Ta), 79W (Tc) TO-262

  • IRF9540NL

    Through hole P channel 100 V 23A (Tc) 3.8W (Ta), 140W (Tc) TO-262

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd