FP50R12KE3BOSA1 Infineon | Infineon agency

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Mfr. #：

FP50R12KE3BOSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Product Catalog	IGBT tube/module
IGBT type	NPT(non-punch-through)
Collector-emitter breakdown voltage(Vces)	1.2kV
Collector current(Ic)	75A
Power(Pd)	280W
Gate threshold voltage(Vge(th)@Ic)	2.15V@15V,50A
Input capacitance(Cies@Vce)	3.5nF@25V
Operating temperature	-40℃~ 125℃@(Tj)

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