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IRG8P50N120KD-EPBF Image

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Mfr. #:
IRG8P50N120KD-EPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT Tube/Module
IGBT Type -
Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Collector Current (Ic) 80A
Power (Pd) 350W
Gate Threshold Voltage (Vge(th)@Ic) 2V@15V,35A
Turn-on delay time (Td(on)) 35ns
Turn-off delay time (Td(off)) 190ns
Conduction loss (Eon) 2.3mJ
Turn-off loss (Eoff) 1.9mJ
Reverse recovery time (Trr) 170ns
Operating temperature -40℃~ 150℃@(Tj)
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