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IPB77N06S212ATMA2 Image

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Mfr. #:
IPB77N06S212ATMA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 N-channel
Drain Source Voltage (Vdss) 55V
Continuous Drain Current (Id) 77A
Power (Pd) 158W
On-resistance (RDS(on)@Vgs,Id) 11.7mΩ@38A,10V
Threshold Voltage (Vgs(th)@Id) 4V@93uA
Gate Charge (Qg@Vgs) 60nC@10V
Input Capacitance (Ciss@Vds) 1.77nF@25V
Operating Temperature -55℃~ 175℃@(Tj)
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