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IRF5802 Image

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Mfr. #:
IRF5802
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface Mount N Channel 150 V 900mA (Ta) 2W (Ta) Micro6? (TSOP-6)
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 150 V
Current at 25°C - Continuous Drain (Id) 900 mA (Ta)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 1.2 ohms @ 540 mA, 10 V
Vgs(th) (max) at Id 5.5 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs 6.8 nC @ 10 V
Vgs (max) ±30 V
Various Vds Input Capacitance (Ciss) (Max) 88 pF @ 25 V
FET Function -
Power Dissipation (Max) 2W (Ta)
Mounting Type Surface Mount
Supplier Device Package Micro6? (TSOP-6)
Package/Case SOT-23-6 Thin, TSOT-23-6
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