IAUZ30N08S5N186ATMA1 Infineon | Infineon agency

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Mfr. #：

IAUZ30N08S5N186ATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 80 V 30A (Tj) 41W (Tc) PG-TSDSON-8-32

Datasheet:

In Stock:

5000

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	80 V
Current at 25°C - Continuous Drain (Id)	30A (Tj)
Drive Voltage (Rds On Max, Rds On Min)	6V, 10V
On-Resistance (max) at Id, Vgs	18.6 mOhm @ 15A, 10V
Vgs(th) (max) at Id	3.8V @ 13μA
Gate Charge?(Qg) (max) at Vgs	12.1 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	759 pF @ 40 V
FET function	-
Power dissipation (max)	41W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TSDSON-8-32
Package/case	8-PowerTDFN

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