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DF200R12KE3HOSA1 Image

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Mfr. #:
DF200R12KE3HOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
product catalog igbt tube/module
igbt type -
collector-emitter breakdown voltage (vces) 1.2kv
power (pd) 1.04kw
gate threshold voltage (vge(th)@ic) 2.15v@15v,200a
input capacitance (cies@vce) 14nf@25v
operating temperature -40℃~ 125 ℃
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