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IMW120R090M1HXKSA1 Image

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Mfr. #:
IMW120R090M1HXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
product catalog silicon carbide field effect transistor (mosfet)
channel type 1 n channel
vds-drain-source breakdown voltage 1200v
id-drain current ( 25℃) 26a
pd-power consumption 115w
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