LOGO
LOGO
IPA030N10N3GXKSA1 Image

img for reference only

Mfr. #:
IPA030N10N3GXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
product catalog field effect transistor (mosfet)
type 1 n-channel
drain-source voltage (vdss) 100v
continuous drain current (id) 79a
power (pd) 41w
on-resistance (rds(on)@vgs,id) 3mω@79a,10v
gate charge (qg@vgs) 206nc@10v
input capacitance (ciss@vds) 14.8nf@50v
operating temperature -55℃ ~ 175℃@(tj)
Related models
  • IPF024N10NF2SATMA1

    Infineon N-channel MOSFET, Vds=100 V, 227 A, PG-TO263-7, SMD Mount

  • IMZ120R060M1HXKSA1

    Infineon MOS tube, Vds=1200 V, PG-TO247-4, SMD installation, IMZ120R060M1HXKSA1

  • IPT014N08NM5ATMA1

    Infineon IPT014N08NM5ATMA1

  • IAUC41N06S5L100ATMA1

    Infineon N-channel MOS tube, Vds=60 V, 41 A, PG-TDSON, SMD installation

  • IRF2804STRLPBF

    Infineon N-channel MOS tube, Vds=40 V, 270 A, TO-262, through-hole mounting, IRF2804STRLPBF

  • IRFB7434PBF

    Infineon N-channel MOS tube, Vds=40 V, 317 A, TO-220AB, through-hole mounting, IRFB7434PBF

  • IPP60R040S7XKSA1

    Infineon N-channel MOSFET, Vds=600 V, 13 A, TO-220, through-hole mounting

  • IAUC120N04S6N010ATMA1

    Infineon N-channel MOS tube, Vds=40 V, 120 A, PG-TDSON, SMD installation

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd