IPS60R3K4CEAKMA1 Infineon | Infineon agency

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Mfr. #：

IPS60R3K4CEAKMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 600 V 2.6A (Tj) PG-TO251-3

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS?
Package	Device
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	600 V
Current at 25°C - Continuous Drain (Id)	2.6 A (Tj)
Drive Voltage (Rds On Max, Rds On Min)	10 V
On-Resistance (max) at Id, Vgs	3.4 Ohm @ 500 mA, 10 V
Vgs(th) (max) at Id	3.5 V @ 40 μA
Gate Charge?(Qg) (max) at Vgs	4.6 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (Max)	93 pF @ 100 V
FET Function	-
Power Dissipation (Max)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package/Case	TO-251-3 Short Lead, IPak, TO-251AA

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