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F4-75R12KS4_B11 Image

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Mfr. #:
F4-75R12KS4_B11
Mfr.:
Infineon Technologies
Batch:
23+
Description:
infineon 1200 v 100 a igbt module, dual half-bridge, 24-pin, pcb, n-channel, 1mhz
Datasheet:
In Stock:
10
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
maximum continuous collector current 100 a
maximum collector-emitter voltage 1200 v
maximum gate-emitter voltage ±20v
maximum power dissipation 500 w
configuration dual half-bridge
package type econo2
installation type pcb
channel type n
transistor configuration dual half-bridge
dimensions 107.5 x 45 x 17mm
minimum operating temperature -40 °c
maximum operating temperature 125 °c
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