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IPW60R045CP Image

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Mfr. #:
IPW60R045CP
Mfr.:
Infineon Technologies
Batch:
23+
Description:
infineon n-channel enhancement type mos transistor, vds=650 v, 60 a, to-247, through hole mounting, 3 pins
Datasheet:
In Stock:
1
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
channel type n
maximum continuous drain current 60 a
maximum drain-source voltage 650 v
package type to-247
series coolmos cp
mounting type through hole
number of pins 3
maximum drain-source resistance value 45 mω
channel mode enhanced
maximum gate threshold voltage 3.5v
minimum gate threshold voltage 2.5v
maximum power dissipation 431 w
transistor configuration single
maximum gate-source voltage -20 v, 20 v
width 5.21mm
maximum operating temperature 150 °c
number of components per chip 1
typical gate charge @vgs 150 nc @ 10 v
transistor material si
length 16.13mm
height 21.1mm
minimum operating temperature -55 °c
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