LOGO
LOGO
IRS2001PBF Image

img for reference only

Mfr. #:
IRS2001PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
half-bridge gate driver ic non-inverting 8-pdip
Datasheet:
In Stock:
18400
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
manufacturer international rectifier
series -
packaging bulk
part status on sale
digikey programmable unverified
channel type stand-alone
number of drivers 2
gate type igbt, n-channel mosfet
voltage - power supply 10v ~ 20v
logic voltage? - vil, vih 0.8v, 2.5v
current - peak output (sink, source) 290ma, 600ma
rise/fall time (typical) 70ns, 35ns
operating temperature -40°c ~ 150°c (tj)
mount type through hole
package/enclosure 8-dip (0.300", 7.62mm)
vendor device package 8-pdip
Related models
  • IRF8302MTRPBF

    Power MOSFET, N-Channel, 30 V, 190 A, 0.0014 ohm, WDSON, SMT

  • IRFU5410PBF

    Power MOSFET, P-Channel, 100 V, 13 A, 0.205 ohm, TO-251AA, Through Hole

  • IPN80R600P7ATMA1

    Power MOSFET, N-Channel, 800 V, 8 A, 0.51 ohm, SOT-223, Surface Mount

  • BSC070N10LS5ATMA1

    Power MOSFET, N-Channel, 100 V, 79 A, ​​0.006 ohm, TDSON, Surface Mount

  • IPZ60R099C7XKSA1

    Power MOSFET, N-Channel, 600 V, 22 A, 0.085 ohm, TO-247, Through Hole

  • IPB60R145CFD7ATMA1

    Power MOSFET, N-Channel, 600 V, 16 A, 0.127 ohm, TO-263 (D2PAK), Surface Mount

  • IPAN60R600P7SXKSA1

    Power MOSFET, N-channel, 600 V, 6 A, 0.49 ohm, TO-220FP, Through Hole

  • IPD35N12S3L24ATMA1

    Power MOSFET, N-Channel, 120 V, 35 A, 0.02 ohm, TO-252 (DPAK), Surface Mount

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd