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IPP048N04N G Image

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Mfr. #:
IPP048N04N G
Mfr.:
Infineon Technologies
Batch:
23+
Description:
infineon n-channel enhancement type mos transistor, vds=40 v, 70 a, to-220, through hole mounting, 3-pin, ipp048n04ngxksa1
Datasheet:
In Stock:
50
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
channel type n
maximum continuous drain current 70 a
maximum drain-source voltage 40 v
package type to-220
series optimos ? 3
mounting type through hole
number of pins 3
maximum drain-source resistance 4.8 mω
channel mode enhanced
maximum gate threshold voltage 4v
minimum gate threshold voltage 2v
maximum power dissipation 79 w
transistor configuration single
maximum gate-source voltage -20 v , 20 v
width 4.572mm
number of components per chip 1
maximum operating temperature 175 °c
length 10.36mm
typical gate polar charge @vgs 31 nc @ 10 v
transistor material si
height 15.95mm
forward diode voltage 0.89v
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