LOGO
LOGO
IPA093N06N3 G Image

img for reference only

Mfr. #:
IPA093N06N3 G
Mfr.:
Infineon Technologies
Batch:
23+
Description:
infineon n-channel enhancement type mos transistor, vds=60 v, 43 a, to-220 fp, through hole mounting, 3-pin, ipa093n06n3gxksa1
Datasheet:
In Stock:
10
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
channel type n
maximum continuous drain current 43 a
maximum drain-source voltage 60 v
series optimos? 3
package type to -220 fp
mounting type through hole
number of pins 3
maximum drain-source resistance value 9.3 mω
channel mode enhanced
maximum gate threshold voltage 4v
minimum gate threshold voltage 2v
maximum power dissipation 33 w
transistor configuration single
maximum gate-source voltage -20 v, 20 v
typical gate charge @vgs 36 nc @ 10 v
length 10.65mm
maximum operating temperature 175 °c
transistor material si
number of components per chip 1
width 4.85mm
minimum operating temperature -55 °c
height 16.15mm
forward diode voltage 1.2v
Related models
  • IRFB4127PBF

    Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB

  • IRFB4137PBF

    Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB

  • IRFB4227PBF

    Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB

  • IRFB4228PBF

    Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB

  • IRFB4229PBF

    Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB

  • IRFB4310PBF

    Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB

  • IRFB4310ZPBF

    Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB

  • IRFB4321PBF

    Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd