IPA093N06N3 G Infineon | Infineon agency

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Mfr. #：

IPA093N06N3 G

Mfr.:

Infineon Technologies

Batch:

23+

Description:

infineon n-channel enhancement type mos transistor, vds=60 v, 43 a, to-220 fp, through hole mounting, 3-pin, ipa093n06n3gxksa1

Datasheet:

In Stock:

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
channel type	n
maximum continuous drain current	43 a
maximum drain-source voltage	60 v
series	optimos? 3
package type	to -220 fp
mounting type	through hole
number of pins	3
maximum drain-source resistance value	9.3 mω
channel mode	enhanced
maximum gate threshold voltage	4v
minimum gate threshold voltage	2v
maximum power dissipation	33 w
transistor configuration	single
maximum gate-source voltage	-20 v, 20 v
typical gate charge @vgs	36 nc @ 10 v
length	10.65mm
maximum operating temperature	175 °c
transistor material	si
number of components per chip	1
width	4.85mm
minimum operating temperature	-55 °c
height	16.15mm
forward diode voltage	1.2v

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