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IMW120R040M1HXKSA1 Image

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Mfr. #:
IMW120R040M1HXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 1200 V 55A (Tc) 227W (Tc) PG-TO247-3
Datasheet:
In Stock:
238
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolSiC?
Package Tube
FET Type N-channel
Technology SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss) 1200 V
Current at 25°C - Continuous Drain (Id) 55A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 15V, 18V
On-Resistance (max) at Id, Vgs 54.4 milliohms @ 19.3A, 18V
Vgs(th) (max) at Id 5.2V @ 10mA
Gate Charge?(Qg) (max) at Vgs 39 nC @ 18 V
Vgs (max) 20V, -5V
Input capacitance (Ciss) (max) at different Vds 1620 nF @ 25 V
FET function -
Power dissipation (max) 227W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package PG-TO247-3
Package/case TO-247-3
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