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IRF100P218AKMA1 Image

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Mfr. #:
IRF100P218AKMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 100 V 209A (Tc) 3.8W (Ta), 556W (Tc) PG-TO247-3
Datasheet:
In Stock:
380
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series StrongIRFET?
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 209A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6V, 10V
On-Resistance (max) at Id, Vgs 1.28 mOhm @ 100A, 10V
Vgs(th) (max) at Id 3.8V @ 278μA
Gate Charge?(Qg) (max) at Vgs 412 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 24000 pF @ 50 V
FET function -
Power dissipation (max) 3.8W (Ta), 556W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package PG-TO247-3
Package/case TO-247-3
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