LOGO
LOGO
IPT014N08NM5ATMA1 Image

img for reference only

Mfr. #:
IPT014N08NM5ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 80 V 37A (Ta), 331A (Tc) 300W (Tc) PG-HSOF-8-1
Datasheet:
In Stock:
2209
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS? 5
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 80 V
Current at 25°C - Continuous Drain (Id) 37A (Ta), 331A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6V, 10V
On-Resistance (max) at Id, Vgs 1.4 milliohms @ 150A, 10V
Vgs(th) (max) at Id 3.8V @ 280μA
Gate Charge? (Qg) (max) at Vgs 200 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 14000 pF @ 40 V
FET function -
Power dissipation (max) 300W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-HSOF-8-1
Package/case 8-PowerSFN
Related models
  • IKW08T120FKSA1

    Infineon IGBT, max. 1200 V, max. 16 A

  • FP30R06W1E3B11BOMA1

    Infineon IGBT module, max 600 V, max 37 A

  • BAS21UE6327HTSA1

    Infineon isolated switching diode, SMD mount, SC-74 package

  • IDP45E60XKSA1

    Infineon single switching diode, through hole mounting, TO-220 package

  • IDW30C65D1XKSA1

    Infineon single diode, Iout=30A, through hole mounting, Vrev=650V, TO-247 package

  • IDW60C65D1XKSA1

    Infineon single diode, Iout=60A, through hole mounting, Vrev=650V, TO-247 package

  • IDW75D65D1XKSA1

    Infineon single diode, Iout=75A, through hole mount, Vrev=650V, TO-247 package

  • FF150R12RT4HOSA1

    Infineon IGBT module, max 1200 V, max 150 A

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd