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IPTG210N25NM3FDATMA1 Image

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Mfr. #:
IPTG210N25NM3FDATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 250 V 7.7A (Ta), 77A (Tc) 3.8W (Ta), 375W (Tc) PG-HSOG-8-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS? 3
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 250 V
Current at 25°C - Continuous Drain (Id) 7.7A (Ta), 77A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 21 mOhm @ 69A, 10V
Vgs(th) (max) at Id 4V @ 267μA
Gate Charge?(Qg) (max) at Vgs 81 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) at different Vds 7000 pF @ 125 V
FET function -
Power dissipation (max) 3.8W (Ta), 375W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-HSOG-8-1
Package/case 8-PowerSMD, gull wing
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