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IPW65R230CFD7AXKSA1 Image

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Mfr. #:
IPW65R230CFD7AXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 650 V 11A (Tc) 63W (Tc) PG-TO247-3
Datasheet:
In Stock:
2
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS?
Package Device
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 11A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 230 mOhm @ 5.2A, 10V
Vgs(th) (max) at Id 4.5V @ 260μA
Gate Charge?(Qg) (max) at Vgs 23 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 1044 pF @ 400 V
FET function -
Power dissipation (max) 63W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO247-3
Package/case TO-247-3
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