IPT013N08NM5LFATMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPT013N08NM5LFATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 80 V 333A (Tc) 278W (Tc) PG-HSOF-8

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	80 V
Current at 25°C - Continuous Drain (Id)	333A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	1.3 mOhm @ 150A, 10V
Vgs(th) (max) at Id	4.1V @ 250μA
Gate Charge?(Qg) (max) at Vgs	158 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (Max)	820 pF @ 40 V
FET Function	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8
Package/Case	8-PowerSFN

IRLL2705TRPBF

Power MOSFET, N-Channel, 55 V, 3.8 A, 0.04 ohm, SOT-223, Surface Mount
SPD30P06PGBTMA1

Power MOSFET, P-Channel, 60 V, 30 A, 0.069 ohm, TO-252 (DPAK), Surface Mount
IRF7105TRPBF

Dual MOSFET, Complementary N and P Channel, 25 V, 3.5 A, 0.083 ohm, SOIC, Surface Mount
IRFP3006PBF

Power MOSFET, N-Channel, 60 V, 195 A, 0.0021 ohm, TO-247AC, Through Hole
IRFR220NTRPBF

Power MOSFET, N-Channel, 200 V, 5 A, 0.6 ohm, TO-252AA, Surface Mount
IRF7342TRPBF

Dual MOSFET, P-Channel, 55 V, 3.4 A, 0.095 ohm, SOIC, Surface Mount
BSS123NH6433XTMA1

Power MOSFET, N-Channel, 100 V, 190 mA, 2.4 ohm, SOT-23, Surface Mount
IPD031N06L3GATMA1

Power MOSFET, N-Channel, 60 V, 100 A, 0.0025 ohm, TO-252 (DPAK), Surface Mount