IPP80P03P4L04AKSA2 Infineon | Infineon agency

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Mfr. #：

IPP80P03P4L04AKSA2

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole P channel 30 V 80A (Tc) 137W (Tc) PG-TO220-3-1

Datasheet:

In Stock:

543

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS?-P2
Package	Device
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	30 V
Current at 25°C - Continuous Drain (Id)	80 A (Tc)
On-Resistance (max) at Id, Vgs	4.4 mOhm @ 80 A, 10 V
Vgs(th) (max) at Id	2 V @ 253 μA
Gate Charge?(Qg) (max) at Vgs	160 nC @ 10 V
Vgs (max)	5 V, -16 V
Various Vds Input Capacitance (Ciss) (Max)	11300 pF @ 25 V
FET Function	-
Power Dissipation (Max)	137W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package/Case	TO-220-3

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