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F411MR12W2M1B76BOMA1 Image

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Mfr. #:
F411MR12W2M1B76BOMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET - Array 4 N-Channel (Half-Bridge) 1200V (1.2kV) 100A (Tj) Chassis Mount AG-EASY1B-2
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series EasyPACK? CoolSiC?
Pack Tray
FET Type 4 N-channel (half-bridge)
FET Function Silicon Carbide (SiC)
Drain-Source Voltage (Vdss) 1200V (1.2kV)
Current at 25°C - Continuous Drain (Id) 100A (Tj)
On-Resistance (max) at Id, Vgs 11.3 milliohms @ 100A, 15V
Vgs(th) (max) at Id 5.55V @ 40mA
Gate Charge (Qg) (max) at Vgs 248nC @ 15V
Various Vds Input Capacitance (Ciss) (Max) 7360pF @ 800V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package/Case Module
Supplier Device Package AG-EASY1B-2
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