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IQE050N08NM5CGATMA1 Image

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Mfr. #:
IQE050N08NM5CGATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount, wettable flanks N channel 80 V 16A (Ta), 101A (Tc) 2.5W (Ta), 100W (Tc) PG-TTFN-9-1
Datasheet:
In Stock:
9770
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 80 V
Current at 25°C - Continuous Drain (Id) 16A (Ta), 101A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6V, 10V
On-Resistance (max) at Id, Vgs 5 milliohms @ 20A, 10V
Vgs(th) (max) at Id 3.8V @ 49μA
Gate Charge?(Qg) (max) at Vgs 43.2 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) at different Vds 2900 pF @ 40 V
FET function -
Power dissipation (max) 2.5W (Ta), 100W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount, wettable flanks
Supplier device package PG-TTFN-9-1
Package/case 8-PowerTDFN
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