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IPB80P03P4L04ATMA2 Image

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Mfr. #:
IPB80P03P4L04ATMA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount type P channel 30 V 80A (Tc) 137W (Tc) PG-TO263-3-2
Datasheet:
In Stock:
7427
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS?-P2
Packaging Tape and Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 80 A (Tc)
On-Resistance (max) at Id, Vgs 4.4 mOhm @ 80 A, 10 V
Vgs(th) (max) at Id 2 V @ 253 μA
Gate Charge?(Qg) (max) at Vgs 160 nC @ 10 V
Vgs (max) 5 V, -16 V
Various Vds Input Capacitance (Ciss) (max) 11300 pF @ 25 V
FET Function -
Power Dissipation (max) 137W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package/Case TO-263-3, D2Pak (2-Lead Tab), TO-263AB
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