LOGO
LOGO
BSC093N15NS5SCATMA1 Image

img for reference only

Mfr. #:
BSC093N15NS5SCATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 150 V 87A (Tc) 139W (Tc) PG-TDSON-8-7
Datasheet:
In Stock:
3491
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS? 5
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 150 V
Current at 25°C - Continuous Drain (Id) 87A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 8V, 10V
On-Resistance (max) at Id, Vgs 9.3 mOhm @ 44A, 10V
Vgs(th) (max) at Id 4.6V @ 107μA
Gate Charge?(Qg) (max) at Vgs 40.7 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 3230 pF @ 75 V
FET function -
Power dissipation (max) 139W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-TDSON-8-7
Package/case 8-PowerTDFN
Related models
  • IPB117N20NFDATMA1

    Power MOSFET, N-Channel, 200 V, 84 A, 0.0103 ohm, TO-263 (D2PAK), Surface Mount

  • IPN60R1K5CEATMA1

    Power MOSFET, N-Channel, 600 V, 5 A, 1.35 ohm, SOT-223, Surface Mount

  • IPB029N06N3GATMA1

    Power MOSFET, N-Channel, 60 V, 120 A, 0.0023 ohm, TO-263 (D2PAK), Surface Mount

  • IPP60R210CFD7XKSA1

    Power MOSFET, N-channel, 600 V, 12 A, 0.171 ohm, TO-220, Through Hole

  • IPN95R2K0P7ATMA1

    Power MOSFET, N-Channel, 950 V, 4 A, 1.71 ohm, SOT-223, Surface Mount

  • IPB160N04S4H1ATMA1

    Power MOSFET, N-Channel, 40 V, 160 A, 0.0014 ohm, TO-263 (D2PAK), Surface Mount

  • IPP60R160P6XKSA1

    Power MOSFET, N-channel, 600 V, 23.8 A, 0.144 ohm, TO-220, Through Hole

  • IRL2910STRLPBF

    Power MOSFET, N-Channel, 100 V, 55 A, 0.026 ohm, TO-263 (D2PAK), Surface Mount

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd