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IPD048N06L3GATMA1 Image

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Mfr. #:
IPD048N06L3GATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 60 V 90A (Tc) 115W (Tc) PG-TO252-3-311
Datasheet:
In Stock:
6426
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 90A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 4.8 mOhm @ 90A, 10V
Vgs(th) (max) at Id 2.2V @ 58μA
Gate Charge?(Qg) (max) at Vgs 50 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 8400 pF @ 30 V
FET function -
Power dissipation (max) 115W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO252-3-311
Package/case TO-252-3, DPak (2-lead tab), SC-63
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