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IQE006NE2LM5CGATMA1 Image

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Mfr. #:
IQE006NE2LM5CGATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through-hole N-channel 25 V 41A (Ta), 298A (Tc) 2.1W (Ta), 89W (Tc) IPAK (TO-251AA)
Datasheet:
In Stock:
4875
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS? 5
Packaging Tape and Reel (TR)
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 25 V
Current at 25°C - Continuous Drain (Id) 41 A (Ta), 298 A (Tc)
On-Resistance (max) at Id, Vgs 650 mOhm @ 20 A, 10 V
Vgs(th) (max) at Id 2 V @ 250 μA
Gate Charge (Qg) (max) at Vgs 82.1 nC @ 10 V
Vgs (max) ±16 V
Input Capacitance (Ciss) (max) at Vds 5453 pF @ 12 V
FET Function -
Power Dissipation (Max) 2.1W (Ta), 89W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251AA)
Package/Case TO-251-3 Short Lead, IPak, TO-251AA
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