IQE006NE2LM5CGATMA1 Infineon | Infineon agency

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Mfr. #：

IQE006NE2LM5CGATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through-hole N-channel 25 V 41A (Ta), 298A (Tc) 2.1W (Ta), 89W (Tc) IPAK (TO-251AA)

Datasheet:

In Stock:

4875

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS? 5
Packaging	Tape and Reel (TR)
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	25 V
Current at 25°C - Continuous Drain (Id)	41 A (Ta), 298 A (Tc)
On-Resistance (max) at Id, Vgs	650 mOhm @ 20 A, 10 V
Vgs(th) (max) at Id	2 V @ 250 μA
Gate Charge (Qg) (max) at Vgs	82.1 nC @ 10 V
Vgs (max)	±16 V
Input Capacitance (Ciss) (max) at Vds	5453 pF @ 12 V
FET Function	-
Power Dissipation (Max)	2.1W (Ta), 89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251AA)
Package/Case	TO-251-3 Short Lead, IPak, TO-251AA

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