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IPD30N12S3L31ATMA1 Image

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Mfr. #:
IPD30N12S3L31ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 120 V 30A (Tc) 57W PG-TO252-3-11
Datasheet:
In Stock:
802
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS?-T
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 120 V
Current at 25°C - Continuous Drain (Id) 30A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 31 milliohms @ 30A, 10V
Vgs(th) (max) at Id 2.4V @ 29μA
Gate Charge?(Qg) (max) at Vgs 24 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) at different Vds 1970 ​​pF @ 25 V
FET function -
Power dissipation (max) 57W
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO252-3-11
Package/case TO-252-3, DPak (2-lead tab), SC-63
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