IPB60R099C6ATMA1 Infineon | Infineon agency

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Mfr. #：

IPB60R099C6ATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 600 V 37.9A (Tc) 278W (Tc) PG-TO263-3

Datasheet:

In Stock:

2833

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	600 V
Current at 25°C - Continuous Drain (Id)	37.9A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	99 mOhm @ 18.1A, 10V
Vgs(th) (max) at Id	3.5V @ 1.21mA
Gate Charge?(Qg) (max) at Vgs	119 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	2660 pF @ 100 V
FET function	-
Power dissipation (max)	278W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TO263-3
Package/case	TO-263-3, D2Pak (2-lead tab), TO-263AB

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