IPW65R029CFD7XKSA1 Infineon | Infineon agency

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Mfr. #：

IPW65R029CFD7XKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through Hole N Channel 650 V 69A (Tc) 305W (Tc) PG-TO247-3

Datasheet:

In Stock:

194

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS?
Package	Dip
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	650 V
Current at 25°C - Continuous Drain (Id)	69A (Tc)
On-Resistance (max) at Id, Vgs	29 mOhm @ 35.8A, 10V
Vgs(th) (max) at Id	4.5V @ 1.79mA
Gate Charge?(Qg) (max) at Vgs	145 nC @ 10 V
Vgs (max)	±20V
Input Capacitance (Ciss) (max) at Vds	7149 pF @ 400 V
FET Function	-
Power Dissipation (Max)	305W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package/Case	TO-247-3

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