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IPW65R029CFD7XKSA1 Image

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Mfr. #:
IPW65R029CFD7XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through Hole N Channel 650 V 69A (Tc) 305W (Tc) PG-TO247-3
Datasheet:
In Stock:
194
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Package Dip
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 69A (Tc)
On-Resistance (max) at Id, Vgs 29 mOhm @ 35.8A, 10V
Vgs(th) (max) at Id 4.5V @ 1.79mA
Gate Charge?(Qg) (max) at Vgs 145 nC @ 10 V
Vgs (max) ±20V
Input Capacitance (Ciss) (max) at Vds 7149 pF @ 400 V
FET Function -
Power Dissipation (Max) 305W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package/Case TO-247-3
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