IMBG120R030M1HXTMA1 Infineon | Infineon agency

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Mfr. #：

IMBG120R030M1HXTMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 1200 V 56A (Tc) 300W (Tc) PG-TO263-7-12

Datasheet:

In Stock:

874

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolSiC?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss)	1200 V
Current at 25°C - Continuous Drain (Id)	56A (Tc)
On-Resistance (max) at Id, Vgs	41 mOhm @ 25A, 18V
Vgs(th) (max) at Id	5.7V @ 11.5mA
Gate Charge?(Qg) (max) at Vgs	63 nC @ 18 V
Vgs (max)	18V, -15V
Various Vds Input Capacitance (Ciss) (max)	2290 pF @ 800 V
FET Function	Standard
Power Dissipation (max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-12
Package/Case	TO-263-8, D2Pak (7-Lead Tab), TO-263CA

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