LOGO
LOGO
IPP034N08N5AKSA1 Image

img for reference only

Mfr. #:
IPP034N08N5AKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 80 V 120A (Tc) 167W (Tc) PG-TO220-3
Datasheet:
In Stock:
414
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 80 V
Current at 25°C - Continuous Drain (Id) 120 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6 V, 10 V
On-Resistance (max) at Id, Vgs 3.4 mOhm @ 100 A, 10 V
Vgs(th) (max) at Id 3.8 V @ 108 μA
Gate Charge?(Qg) (max) at Vgs 87 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 6240 pF @ 40 V
FET Function -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package/Case TO-220-3
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd