LOGO
LOGO
IPW65R050CFD7AXKSA1 Image

img for reference only

Mfr. #:
IPW65R050CFD7AXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 650 V 45A (Tc) 227W (Tc) PG-TO247-3-41
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS? CFD7A
Package Dip
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 45A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 50 mOhm @ 24.8A, 10V
Vgs(th) (max) at Id 4.5V @ 1.24mA
Gate Charge?(Qg) (max) at Vgs 102 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 4975 pF @ 400 V
FET function -
Power dissipation (max) 227W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO247-3-41
Package/case TO-247-3
Related models
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd