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IPT60R125G7XTMA1 Image

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Mfr. #:
IPT60R125G7XTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 650 V 20A (Tc) 120W (Tc) PG-HSOF-8-2
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? G7
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 20 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 125 mOhm @ 6.4 A, 10 V
Vgs(th) (max) at Id 4 V @ 320 μA
Gate Charge?(Qg) (max) at Vgs 27 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 1080 pF @ 400 V
FET Function -
Power Dissipation (Max) 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-2
Package/Case 8-PowerSFN
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