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AUIRF3205Z Image

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Mfr. #:
AUIRF3205Z
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 55 V 75A (Tc) 170W (Tc) TO-220AB
Datasheet:
In Stock:
2535
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
HEXFET?
Fittings
Not for new designs
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 55 V
Current at 25°C - Continuous Drain (Id) 75A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 6.5 milliohms @ 66A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 110 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 3450 pF @ 25 V
FET Function -
Power Dissipation (max) 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
AUIRF3205
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