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IPW60R031CFD7XKSA1 Image

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Mfr. #:
IPW60R031CFD7XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 650 V 63A (Tc) 278W (Tc) PG-TO247-3
Datasheet:
In Stock:
256
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? CFD7
Package Dip
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 63A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 31 mOhm @ 32.6A, 10V
Vgs(th) (max) at Id 4.5V @ 1.63mA
Gate Charge?(Qg) (max) at Vgs 141 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 5623 pF @ 400 V
FET function -
Power dissipation (max) 278W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO247-3
Package/case TO-247-3
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