LOGO
LOGO
SPW55N80C3FKSA1 Image

img for reference only

Mfr. #:
SPW55N80C3FKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Tongkou N channel 800 V 54.9A (TC) 500W (TC) PG-TO247-3
Datasheet:
In Stock:
930
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? C3
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 800 V
Current at 25°C - Continuous Drain (Id) 54.9A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 85 milliohms @ 32.6A, 10V
Vgs(th) (max) at Id 3.9V @ 3.3mA
Gate Charge?(Qg) (max) at Vgs 288 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 7520 pF @ 100 V
FET function -
Power dissipation (max) 500W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO247-3
Package/case TO-247-3
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd